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a) Sketch the variation of electron concentration with temperature for i) an n-type semiconductor doped with 1021 donors m-3 ii) an intrinsic semiconductor. b) Expla
Draw the implementation of time-invariant system A linear time-invariant system is described by the difference equation: y[n] = 2x[n] - 3x[n - 1] + 2x[n - 2] Draw the i
Construction - UniJunction Transistor: Construction: The basic structure of uni junction transistor is shown in fig. (a). It essentially consists of a lightly doped N type s
Diffusion Current : The carrier currents are also due to concentration gradients in the doped material which lead to diffusion of carriers from high concentration region to l
Explain the Synchronous Compensators These are synchronous motors running without mechanical loads (or with load if required). Similar to the synchronous generators, they can a
Explain the suitability of aluminium that is used as electrical conducting materials. Aluminium : Conductors are appropriate for ambient and very high temperature. Use of alu
A balanced star-connected load is connected across a three phase 450V 50 Hz AC supply. Each load element has an impedance of 5+j12 Ω. Calculate: (i) The power factor of the
var
Q. In a depletion MOSFET for which V P = 3 V and I DSS = 11mA, the drain current is 3mA when v DS is set at the largest value that will maintain ohmic region operation. Find v G
Hall Effect experiment: Prob. Write short note on Hall Effect and its applications. What properties of a semiconductor are determined from a Hall Effect experiment? Sol.
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