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Q. What is basic working of MOSFET?
The metal-oxide-semiconductor construction leads to the name MOSFET, which is also known as insulated-gate FET or IGFET. One type of construction results in the depletion MOSFET, the other in the enhancement MOSFET. The names are derived from the way in which channels are formed and operated. Both n-channel and p-channel MOSFETs are available in either type.
The input resistance of a MOSFET is even higher than that of the JFET (typically on the order of 1010 to 1015 ) because of the insulating layer of the gate. As in JFETs, the conductive gate current is negligibly small in most applications. The insulating oxide layer can, however, be damaged easily due to buildup of static charges. While the MOSFET devices are often shipped with leads conductively tied together to neutralize static charges, users too must be careful in handling MOSFETs to prevent damage due to static electricity. TheMOSFETs are used primarily in digital electronic circuits. They can also provide controlled-source characteristics, which are utilized in amplifier circuits.
Q. Point charges, each of √4πε 0 C, are located at the vertices of an equilateral triangle of side a. Determine the electric force on each charge.
Analysis Flow Similar to most subjects, the analysis of semiconductor devices is also performed by starting from simpler problems and regularly progressing to more complex one
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Q. In a depletion MOSFET for which V P = 3 V and I DSS = 11mA, the drain current is 3mA when v DS is set at the largest value that will maintain ohmic region operation. Find v G
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