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It has large energy gap 3.0ev and is regarded as high temperature semiconductor. It is extremely refectory subliming in the region of 28000C. Because of large band gap it is hoped that silicon carbide would be useful for very high temperature rectifier and transistors.
It describes the behaviour of a collection of a particle N(E) with gives energy through N(E)α exp(-E/KT) where K is Boltzmann constant. It can be explained as a collection of
law of successive diintegration
Q. As-per to Coulombs Law if two charged particles are repelled with a given force at a distance d by what multiple will the force decrease by if d is increased by 4 times? An
how is Rainbow is formed in a Environment ?
Melting point: 525 0 C. It has small band gap and very high mobility around 70,000Cm 2 /V-Sec. It has much easier to prepare in single crystal from the Gallium arsenide. It is
The lagging of an effect behind its cause; especially the phenomenon in which the magnetic induction of a ferromagnetic material lags behind the changing magnetic field.
Steps of working of Unijunction Transistor (i) When emitter circuit is closed through switch S but emitter voltage is reduced to zero, and a voltage V BB is applied between
what are the source of error in simple pendulum
define biased clipper?
how to make a ray diagram ?? and what are f, p ?? and what is refraction index?????
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