Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Explain temperature dependence of electrical resistivity and conductivity in semiconductors.
The electrical conductivity of the semiconductors changes considerably with temperature changes. At absolute zero, this behaves as an insulator. And at room temperature, due to thermal energy, several of the covalent bonds of the semiconductor break. The breaking of bonds sets those electrons free that are engaged in the formation of such bonds. It results in few free electrons. All these electrons constitute a small current if potential is applied across the semiconductor crystal. It demonstrates the conductivity for intrinsic semiconductor increases along with increase in temperature as specified by η=A exp(-Eg/2kT), here η is the carrier concentration, T is the temperature, Eg is the energy band gap and A is constant. If in extrinsic semiconductors, addition of small amount of impurities creates a large number of charge carriers. That number is so large that the conductivity of an extrinsic semiconductor is a lot of times more than an intrinsic semiconductor at the room temperature. In n-type semiconductor each donor has donated their free electrons at room temperature. The additional thermal energy only serves to raise the thermally generated carriers. It increases the minority carrier concentration. A temperature is reached while the number of covalent bonds which are broken is so large which the number of holes is almost equal to the number of electrons. After that the extrinsic semiconductor behaves as intrinsic semiconductor.
The variable resistor Z o in the circuit shown in Fig. 1 is adjusted until maximum average power is delivered to Zo. a) Find the value of Z o b) Calculate the maximum av
Merits and demerits of? AC and DC onboard ship
Q. Draw a neat circuit of Colpitt's oscillator using an n-p-n transistor. Give its equivalent circuit obtain expressions for (i) frequency of oscillation and(ii) minimum gain for s
Q. Explain the measurement of frequency in detail by using Wein's bridge. Sol. The Wein's bridge is presented here not only for its use as an AC bridge to measure frequency
HOW TO DESIGN
Explain Atomic structure and Energy Band Diagram of Germanium. Germanium : This is one of the most common semiconductor material utilized in the application in electronics.
why BETA a current gain parameter of common emitter amplifier is temperature dependent?
Configured dual processor architecture In centralized SPC, dual processor architecture can be configured to operate in following one of three modes: 1. Standby mode: In
What are usue and all the details of 8051 microcontroller with its block diagram pin diagram and all other details
Q. A 10-kW, 250-V dc shunt generator, having an armature resistance of 0.1and a field resistance of 250 , delivers full load at rated voltage and 800 r/min. The machine is now ru
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +91-977-207-8620
Phone: +91-977-207-8620
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd