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Consider a CS JFET amplifier with the following parameters : R1 = 350 k; R2 = 100 k, RSS = 1200 , RD = 900 , RL = 1000 , RS = 2000 , ro = 15 k,gm = 6 × 10-3 S,Cgs = 3 pF, Cgd = 1 pF, and ωL = 2π × 100 rad/s. Discuss the low- and high-frequency designs.
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One battery having of eight cells in parallel. Emf and internal resistance of every cells is 1.5V and 0.4Ω. Find the value of current if an external resistance of 5Ω is connected t
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) Design a suitable double –layer lap winding for a 6-pole dc armature with 18 slots
The Central Processing Unit The central processing unit is the brain of whole PLC. The CPU consist of a microprocessor memory chip and other integrated circuits to con
Discuss classification of conducting materials into low resistivity and high resistivity materials. Conducting materials are categorized as low resistivity materials and high r
Explain isolated I/O scheme. In I/O mapped I/O scheme the addresses allocated to memory locations can also be assigned to I/O devices. Because the same address may be assigned
how to determine the peak inverse voltage across ideal diodes
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