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Consider a CS JFET amplifier with the following parameters : R1 = 350 k; R2 = 100 k, RSS = 1200 , RD = 900 , RL = 1000 , RS = 2000 , ro = 15 k,gm = 6 × 10-3 S,Cgs = 3 pF, Cgd = 1 pF, and ωL = 2π × 100 rad/s. Discuss the low- and high-frequency designs.
Consider a three-phase induction motor with a normal torque-speed characteristic. Neglecting the effects of stator resistance and leakage reactance, discuss the approximate effect
Mathematical relationship between the induced e.m.f and the network Faraday noted that the e.m.f induced in a loop is proportional to the rate of change of magnetic flux by it:
Metal-Oxide-Semiconductor Structure A traditional metal-oxide-semiconductor abbreviated as MOS structure is acquired by growing a layer of silicon dioxide (SiO 2 ) on top of
CMOS processes: The low-performance "lateral" bipolar transistors occasionally employed in CMOS processes are sometimes designed symmetrically, i.e., with no distinction betwe
i need tutor for teaching me matrix converter based upfc modelling and building using matlab
Q. What do you mean by Phase Sequence? It is standard practice in the United States to designate the phase A-B-C such that under balanced conditions the voltage and current in
Referring to Figure, let boxes 2, 3, and 5 consist of a 0.2-H inductor, a 5- resistor, and a 0.1-F capacitor, respectively. Given A = 5, and v 1 = 10 sin 10t, i 2 = 5 sin 10t ,
A heater element is made of nichrome wire having resistivity equal to 100 × 10 -8 ohm-m. The diameter of the wire is 0.4mm. Calculate the length of the wire required to get a resi
Q. (a) Consider a three-phase star or wye half-wave recti?er with a purely resistive load R. Determine: (i) efficiency, (ii) formfactor, (iii) ripple factor, (iv) TUF, and (v) PIV
Series circuit Total resistance, R T = R1 + R2 + R3 The current I is the same in all parts of the circuit , I = I 1 = I 2 = I 3 The voltage drop at each resistor, V1,
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