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Write an m-file "distan.m" which does all the following operations:
(i) computes 10 dimensional histogram of an input image h1=sum(hist(imn,10)'); (ii) computes negative image and its histogram (iii) normalizes vectors h1, h2 such that the integral of each is 1 Why does it have to be normalized? (iv) displays both histograms (v) computes similarity between two histograms using euclidean distance, histogram intersection, correlation, chi-square
function distan(im) imn=imnorm(im)/255.0; h1=? h1n=? imnn=? h2=? h2n=? %euclidean he=sqrt(sum((h1-h2).^2)) %correlations hc=? %intersection, use min function hh=? %chi-square, use sum function hch=? How do the distances differ?
Determine the Service and Backwash Rates The system on site is a pressure sand filter, with a service curve. The filter is backwashed using the feed pump, at a higher flow rat
Normal 0 false false false EN-IN X-NONE X-NONE RECTIFIERS AND INVERTERS
y more number of resistance and capacitor are used in a circuit what is the purpose to add ore than one..?
principle of induction motor
Q. Write short note on Quantization? Quantization: This is first step in PCM. Total amplitude range of the modulating signal is divided into a number of standard levels calle
What are the predefined interrupts in 8086? The predefined interrupts are, DIVISION BY ZERO (type 0) Interrupt. SINGLE STEP (type 1) Interrupt. NONMASKABLE (ty
Q. Explain the operation of N-channel FET? Transistor is a linear semiconductor device that controls current with the application of a lower-power electrical signal. Transistor
The armature of a d.c. machine has a resistance of 0.3 and is connected to a 200V supply. Calculate the e.m.f. generated when it is running (a) as a generator giving 80A (b) as a
Peak inverse Voltage Peak inverse voltage is important parameter in the design of rectifier circuit. PIV is the maximum voltage that appears across the device during its
The mobility of free electrons and holes for pure silicon are 0.13 and 0.05 m2/V-S respectively. Find the intrinsic conductivity for silicon. Assuming ni = 1.5x 1016/cm3 at room te
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