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An n-channel depletion MOSFET, for which IDSS = 7mA and VP = 4 V, is said to be operating in the ohmic region with drain current iD = 1 mA when vDS = 0.8 V. Neglecting the effect of vDS on iD, find vGS and check to make sure the operation is in the ohmic region.
Define The universal property of NAND and NOR Gates? The NAND and NOR gates are called universal gates, because any gate can build by using these two gates. The univers
What do you maent by Debugger? Debugger: This is a program that allows user to debug and test programs. All computers with microprocessor kits give debugging facility. To not
Illustration the basic working principle, process parameters, economics, safety precautions and applications of plasma Arc Machining process(PAM) Discuss Electron Beam Machining
IGBT ( Insulated Gate Bipolar Transistor ) IGBT stands for insulated gate bipolar transistor. It is having the advantages of both power MOSFET and BJT. In IGBT layer is P
Explain Polymers and their applications. Polymeric materials or plastics contain a large group of organo or organic metallic high molecules compound. The common properties of s
Transmission Through a LiNb0 3 Plate Examine the transmission of an unpolarized He-Ne laser beam (?o= 633 nm) normally incident on a LiNb0 3 plate (ne = 2.29, no = 2.20) of thickn
Structure of Bipolar junction transistor: A BJT contains three differently doped semiconductor regions that are: emitter region, base region and collector region. These regio
what is neutral point
bias compensation techniques for ac and dc characteristics
can i use steplaizer with capisetor step up valtage
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