Determine the associated number of electrons

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Reference no: EM131465638

Question: The destructive breakdown of silicon dioxide occurs with an electric field of about 10 million V/cm. Consider an integrated MOSFET with a 4.5-nm thick oxide.

1. Determine the gate-to-source bias voltage that will result in destructive breakdown.

2. Determine the associated charge in Coulombs for a 0.18 µm x 2 µm gate.

3. Determine the associated number of electrons.

Reference no: EM131465638

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