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A) Calculate the Equilibrium density of Vacancies in a Si (Silicon) lattice at room temperature and at 200C lattice constantfor Si is 5.43A.
B) Describe how stacking faults are induced during oxidation, and the methods found which prevent their formation during oxidation?
C) Describe the difference between extrinsic and intrinsic gettering?
Using a 500 Ohm resistance, design an RC low-pass filter that would attenuate a 120-Hz sinusoidal voltage by 20 dB with respect to the DC gain.
The electrostatic potential in space is given by the scalar field V(r)=V(x,y,z)=e^y + (3x)^2-4cos(z) Find the potential difference between the points P(1,1,1) and Q(0,0,0).
A 5-element uniform linear array with inter-element spacing of λ/2 is to have maximum radiation in the direction θ=60° , find the current phases , find the directions of null radiation , hence sketch the radiation pattern
A) If 220kV, 220 MVA with power factor 0.8 lagging is determined to be at the receiving end, calculate the voltage at the transmitting end. B) If 220kV, 220 MVA with power factor 0.8 lagging is determined to be at the receiving end
along the direction of the thumb according to the right hand rule
The current in a circuit element is i(t) = 4 sin 3t A when t ≥ 0 and i(t) = 0 when t Determine the total charge that has entered a circuit element for t ≥ 0.
Charge densityrequired toproduce afield. Alayer of charge fills the space between x = -a andx = +a.The layer has a charge density p(x). The electric field intensity everywhere inside the charge distribution is given by E(x) = x&3, where K is a giv..
A CS amplifier using an NMOS with gm = 3.8 mA/V is found to have an overall voltage gain of -16 V/V. What value should a resistance RS inserted in the source lead have to reduce the overall voltage gain to -8 V/V
What refractive index and what thickness do you need to make aquarter-wave anti-reflection coating between air and silicon at10GHz At λ0= 10μm Assume undoped silicon with losses negligible.
Find the magnitude of the electric field at all points in space both inside and outside the slab, in terms of x, the distance measured from the central plane of the slab. What is the field for x = 1.00 cm What is the field for x = 8.00 cm
1. An operator prepares an 8-bit binary value with a dip switch. 2. A momentary contact switch (single-pole-single throw) connected to only one end of a cross-coupled NAND latch is activated. This sets the output of the latch to a logic one.
A silicon abrupt junction, approximated by a step junction, has a doping of NA= 5 x1015/cm3 and ND= 1015/cm3 and a cross-sectional area (A) of 10-4cm2. Assume the depletion approximation, VA=0, and ni=1010/cm3 to: a. Calculate Vbi.
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