Principal of bipolar junction transistor, Electrical Engineering

Principal of Bipolar junction transistor:

A bipolar junction transistor (BJT) is a three-terminal electronic device that constructed of doped semiconductor material and might be employed in amplifying or switching applications. Bipolar transistors are so named as their operation includes both electrons and holes. Charge flow in a BJT is because of bidirectional diffusion of charge carriers beyond a junction among the two regions of different charge concentrations. This type of operation is contrasted with unipolar transistors, like field-effect transistors, in which only one carrier type is included in charge flow because of drift. By design, most of the BJT or bipolar junction transistor collector current is because of the flow of charges injected from a high-concentration emitter into the base in which they are minority carriers that diffuse toward the collector, and so BJTs are categorized as minority-carrier devices.

52_Bipolar junction transistor.png

Schematic symbols for PNP- and NPN-type BJTs.

Posted Date: 1/10/2013 6:36:14 AM | Location : United States







Related Discussions:- Principal of bipolar junction transistor, Assignment Help, Ask Question on Principal of bipolar junction transistor, Get Answer, Expert's Help, Principal of bipolar junction transistor Discussions

Write discussion on Principal of bipolar junction transistor
Your posts are moderated
Related Questions
The report should contain all of the information detailed below together with your analysis of the circuit and any conclusions. The report should contain the code for your simulati

Logically AND the contents of memory Contents of memory  location,  whose address is specified by HL register pair are logically AND with the  contents  of the accumulator. The


(a) Give three different ways how electro-magnetic interference can be reduced in twisted pairs based transmission. (b) Noise are unwanted signals affecting transmission. Lis

Q. What is Signal Multiplexing? Frequency-division multiplexing (FDM) and time-division multiplexing (TDM) systems. When data from many sources in time are interlaced, the inte

Consider the circuit of Figure (a) and obtain the complete solution for the voltage v C (t) across the 5-F capacitor and the voltage v x (t) across the 5- resistor.

Explain i onic polarization. Ionic polarization is polarization that is caused by relative displacements between negative and positive ions in ionic crystals (for illustrati

Q. Consider the balanced three-phase alternating currents, shown in Figure, to be flowing in phases a, b, and c, respectively, of the two pole stator structure shown in Figure with

1- Φ Half Bridge Inverters 1-Φ bridge  inverter may be  of two  type 1-? half  bridge  and 1-? full  bridge  inverter. 1-? half bridge  inverter with resistive load to explain

Connection of Shunt Capacitors - Across Individual Customers The most appropriate manner of improving PF of the distribution system and thereby reducing line losses is to link