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From a source with Pin = 2.4 mW, we want to get Pout = 60 mW at a distance l = 20 km from the source. α for the transmission line is given to be 2.3 dB/km. The available amplifiers have adjustable power gain, but are subject to two limitations: (i) the input signal power must be at least 1 µW to overcome internal noise, and (ii) the output signal power must not be greater than 1 W to avoid nonlinear distortion. Design an appropriate system.
Find out Form factor and Peak factor: For the output of full wave rectifier, find out (a) RMS value, (b) Average value, (c) Form factor, and (d) Peak factor. S
PN Diode The current-voltage characteristics are of major concern in the learning of semiconductor devices with light entering like a third variable in optoelectronics devic
Considering the TTL NAND gate circuit of Figure, with one or more inputs low, show that the output will be high.
Structure and use of PNP transistor: The figure opposite is a schematic presentation of a PNP transistor related to two voltage sources. To construct the transistor conduct ap
what is emf
Saturation or active mode While V GS > V th and V DS > (V GS - V th ) The switch is turned on, and a channel has been made that allows current to flow
Explain Superconductivity. Superconductivity - The resistivity of most metals rises with rise in temperature and vice-versa. There are several metals and chemical compounds
Q. Consider the common-source JFET circuit shown in Figure with ?xed bias. Sketch the sinusoidal variations of drain current, drain voltage, and gate voltage superimposed on the di
Q. For the CS JFET ampli?er circuit of Figure, R D = 2k and R L = 3k. The JFET with ro = 15 k has a voltage gain A v1 =-4.5 when the entire source resistance is bypassed. Fin
Explain the operation of IRET instruction. What memory locations contain the vector for an INT 34 instruction? The Interrupt return (IRET) instruction is utilized only along w
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