Power mosfet - power semiconductor devices , Electrical Engineering

Assignment Help:

Power MOSFET

MOSFET stands  for metal oxide semiconductor fields  effect transistor.  A power  MOSFET has  three  terminal  drain source  and  gate,. It  is unipolar device  means its operations  depends upon   the flow  of one  carriers  only. The power MOSFET is designed  to handle large amounts of power. Compared to the other power semiconductor  device s its  main advantages are high  commutation speed  and good efficiency at low voltages. Power MOSFET is a voltage controlled  device and it requires only small  input  current. It has extremely high input impedance  and is widely used in switching  devices. The  power MOSFET  is the most widely used low voltage  switch and  used in low power high frequency converters power suppliers DC to DC converters and low voltage motor controllers. MOSFET have a very thin silicon dioxide layer  is kept  very thin to ensure that the gate has  good control  over the  gate  current. This layer  could be  destroyed if a voltage  higher  than rated value is applied to the gate.

2055_Power MOSFET.PNG

                                                                         figure N - Channel V- MOSFET

Power MOSFET  are usually constructed in v shape as shown in  because  of its v shapes  sometimes it is called  the  v MOSFET  or V EFT. V shaped  cut penetrates from the  device  surface  almost  to the N  substrate through  N  P and N layers  as shown  in  the N  layers  are made  heavily doped low resistive material and the N layers is made  lightly doped  high resistance region.

1304_power MOSFET N channel P channel.PNG

                                                             Figure symbol of power MOSFET N channel P channel

The silicon dioxide dielectric  layer  covers both the  horizontal surface and v cut  surface. The  insulated gate is made by depositing a metal film on the silicon dioxide (Sio2) layer in the v cut. Source terminals are made by  making a contact to the upper N+ and P layers  through the layer. The  drain terminal is made  by N+ substrate of the device. The  power MOSFET is an enhancement  type MOSFET  and in this type of MOSFET  there is no channel exists  between drain  and source until the  gate is  positive with respect to the source. The  symbol of power MOSFET is shown  in this type of MOSFET  there is an enhancement type and source  until  the gate is positive  with respect to the source. The symbol of power  MOSFET.

 


Related Discussions:- Power mosfet - power semiconductor devices

What are the constructional features of dc machines, Q. What are the Constr...

Q. What are the Constructional Features of DC Machines? Adc generator ormotormay have asmany as four fieldwindings, depending on the type and size of the machine and the kind o

Power semiconductor-controlled drives, Q. Explain Power semiconductor-contr...

Q. Explain Power semiconductor-controlled drives? Power electronics deals with the applications of solid-state electronics for the control and conversion of electric power. Con

Superposition Theorem, Help using superpositions find voltage across all re...

Help using superpositions find voltage across all resistor

Determine n-type semiconductor of example which material, N-type semiconduc...

N-type semiconductor is an example of (A)  Extrinsic semiconductor.            (B) Intrinsic semiconductor. (C)  Super conductor.                        (D)  Insulators.

Explain branch prediction logic in pentium, Explain Branch prediction logic...

Explain Branch prediction logic in Pentium. Branch prediction logic in Pentium: The Pentium microprocessor utilizes branch prediction logic to decrease the time needed for a

Determine line voltage for the y- connected machine, A 3-phase, 16-pole syn...

A 3-phase, 16-pole synchronous machine is driven by a prime mover at a speed of 600-rpm with the stator open circuited. The rotor flux per pole is 0.025-Wb. Determine (a) the fr

Determine the resultant mmf, Q. The N-coil windings of a three-phase, two-p...

Q. The N-coil windings of a three-phase, two-pole machine are supplied with currents ia,ib, and ic, which producemmfs given by F a = Ni a cos θm; F b = Ni b cos(θm - 120°); and

Ic packaging, which type of ic package is more advantageous,suitable and ve...

which type of ic package is more advantageous,suitable and versatile

Force between current carrying conductors, If a second current carrying con...

If a second current carrying conductor is placed near to the first and the corresponding magnetic fields drawn, we can begin to visualise why a force is created between them. If

Techniques and resources in problem base learning, Techniques and resources...

Techniques and resources Different techniques and resources were used in different areas of the problem during the course of the project. The most important of them was th

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd