Power mosfet - power semiconductor devices , Electrical Engineering

Assignment Help:

Power MOSFET

MOSFET stands  for metal oxide semiconductor fields  effect transistor.  A power  MOSFET has  three  terminal  drain source  and  gate,. It  is unipolar device  means its operations  depends upon   the flow  of one  carriers  only. The power MOSFET is designed  to handle large amounts of power. Compared to the other power semiconductor  device s its  main advantages are high  commutation speed  and good efficiency at low voltages. Power MOSFET is a voltage controlled  device and it requires only small  input  current. It has extremely high input impedance  and is widely used in switching  devices. The  power MOSFET  is the most widely used low voltage  switch and  used in low power high frequency converters power suppliers DC to DC converters and low voltage motor controllers. MOSFET have a very thin silicon dioxide layer  is kept  very thin to ensure that the gate has  good control  over the  gate  current. This layer  could be  destroyed if a voltage  higher  than rated value is applied to the gate.

2055_Power MOSFET.PNG

                                                                         figure N - Channel V- MOSFET

Power MOSFET  are usually constructed in v shape as shown in  because  of its v shapes  sometimes it is called  the  v MOSFET  or V EFT. V shaped  cut penetrates from the  device  surface  almost  to the N  substrate through  N  P and N layers  as shown  in  the N  layers  are made  heavily doped low resistive material and the N layers is made  lightly doped  high resistance region.

1304_power MOSFET N channel P channel.PNG

                                                             Figure symbol of power MOSFET N channel P channel

The silicon dioxide dielectric  layer  covers both the  horizontal surface and v cut  surface. The  insulated gate is made by depositing a metal film on the silicon dioxide (Sio2) layer in the v cut. Source terminals are made by  making a contact to the upper N+ and P layers  through the layer. The  drain terminal is made  by N+ substrate of the device. The  power MOSFET is an enhancement  type MOSFET  and in this type of MOSFET  there is no channel exists  between drain  and source until the  gate is  positive with respect to the source. The  symbol of power MOSFET is shown  in this type of MOSFET  there is an enhancement type and source  until  the gate is positive  with respect to the source. The symbol of power  MOSFET.

 


Related Discussions:- Power mosfet - power semiconductor devices

Calculate turns ratio, A switch-mode power supply is to be designed with th...

A switch-mode power supply is to be designed with the following specifications: input voltage V s = 48 V ± 10%, output voltage V o = 5 V, switching frequency f s = 100 kHz, outp

Power Engineering, A three-phase transposed line is composed of one ACSR co...

A three-phase transposed line is composed of one ACSR conductor per phase with flat horizontal spacing of 11 meters as shown in Figure (a). The conductors have a diameter of 3.625

Hall effect, Describe hall effect?also describe it''s mathematical analysis...

Describe hall effect?also describe it''s mathematical analysis and it''s properties

Find the efficiency of the transformer, Q. Athree-phase, 600-kVA, 2300:230-...

Q. Athree-phase, 600-kVA, 2300:230-V,Y-Ytrans- former bank has an iron loss of 4400 W and a full- load copper loss of 7600 W. Find the efficiency of the transformer for 70% full lo

Explain interrupts of 8085, Explain Interrupts of 8085. a) Maskable  in...

Explain Interrupts of 8085. a) Maskable  interrupt b)  Vectored interrupt c)  Non maskable interrupt d) Hardware interrupt e)  Software interrupt

Emitter follwer, Ask questertion #Minimum 100 words accepted#

Ask questertion #Minimum 100 words accepted#

DC generator, define all the symbols with their units of DC generater

define all the symbols with their units of DC generater

Analog Filters, Each of the following functions is abs(H(jw))^2 of a certai...

Each of the following functions is abs(H(jw))^2 of a certain network function H(s). Obtain all the possible H(s) for each given abs(H(jw))^2. [(w^4)+25]/[(w^4)+(12w^2)+49]

Digital electronics logic family, For a given logic family, consider VOL = ...

For a given logic family, consider VOL = 0.25V and VOH = 5 V . For a given circuit, VIL = 0.96 V and VIH = 2.18 V. Find the largest positive-going and largest negative-going nois

Transformer box, a) Illustrate the Schematic diagram of the Transformer Box...

a) Illustrate the Schematic diagram of the Transformer Box used in the Practical Session b)  Calculate the output voltage on an Oscilloscope and determine its amplitude and freq

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd