N-channel enhancement mosfet, Electrical Engineering

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Given an n-channel enhancement MOSFET having VT = 4V, K = 0.15 A/V2 , IDQ = 0.5A, VDSQ = 10 V, and VDD = 20 V. Using the dc design approach outlined in this section, determine VGSQ,VG,RD,RS,R1, and R2.


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