What are the uses of mosfet, Electrical Engineering

Assignment Help:

Q. What are the uses of MOSFET?

The most common use of MOSFET transistors today is the CMOS (complementary metallic oxide semiconductor) integrated circuit which is the basis for most digital electronic devices. These use a totem-pole arrangement where one transistor (either the pull-up or the pull-down) is on while the other is off. Hence, there is no DC drain, except during the transition from one state to the other, which is very short. As mentioned, the gates are capacitive, and the charging and discharging of the gates each time a transistor switches states is the primary cause of power drain.

The C in CMOS stands for 'complementary'. The pull-up is a P-channel device (using holes for the mobile charge carriers) and the pull-down is N-channel (electron carriers). This allows busing of the control terminals, but limits the speed of the circuit to that of the slower P device (in silicon devices). The bipolar solutions to push-pull include 'cascode' using a current source for the load. Circuits that utilize both unipolar and bipolar transistors are called BiFet. A recent development is called 'vertical P'. Formerly, BiFet chip users had to settle for relatively poor (horizontal) P-type FET devices. This is no longer the case and allows for quieter and faster analog circuits.

FETs can switch signals of either polarity, if their amplitude is significantly less than the gate swing, as the devices (especially the parasitic diode-free DFET) are basically symmetrical. This means that FETs are the most suitable type for analog multiplexing. With this concept, one can construct a solid-state mixing board, for example.

The power MOSFET has a 'parasitic diode' (back-biased) normally shunting the conduction channel that has half the current capacity of the conduction channel. Sometimes this is useful in driving dual-coil magnetic circuits (for voltage spike protection), but in other cases it causes problems.

The high impedance of the FET gate makes it rather vulnerable to electrostatic damage; though this is not usually a problem after the device has been installed. A more recent device for power control is the insulated-gate bipolar transistor, or IGBT. This has a control structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These have become quite popular.


Related Discussions:- What are the uses of mosfet

Resistivity, Low and high resistivity materials and their applications

Low and high resistivity materials and their applications

Find the expression for the no-load speeds, Q For a three-phase, fully cont...

Q For a three-phase, fully controlled, recti?er-fed, separately excited dc motor, corresponding to ideal no-load operation, find the expression for the no-load speeds. Comment on w

What is the voltage controlled resistance region, Q. What is the Voltage co...

Q. What is the Voltage controlled resistance region?  In this region the JFET can actually be employed as a variable resistor whose resistance is controlled by the applied gate

Calculate the length of the wire required to get resistance, An  electric  ...

An  electric  heater  element  is  made  of  Nichrome  wire  having  resistivity  equal  to 100 ×10 -8 ohm-metre. The diameter of the wire is 0.3 mm. Calculate the length of the w

Explain thevenin and norton equivalent circuits, Q. Explain Thevenin and no...

Q. Explain Thevenin and norton equivalent circuits? For a linear portion of a circuit consisting of ideal sources and linear resistors, the volt-ampere (v-i) relationship at an

Briefly explain automotive ignition system, Q. Briefly explain Automotive I...

Q. Briefly explain Automotive Ignition System? Ignition systems in automobiles have been designed as a straightforward application of electrical transients. Figure shows a simp

Forces and torques in magnetic-field systems, Q. Forces and torques in magn...

Q. Forces and torques in magnetic-field systems? We mentioned earlier that the greater ease of storing energy in magnetic fields largely accounts for the common use of electrom

Find the t- domain forced response, Consider an RLC series circuit excited ...

Consider an RLC series circuit excited by v(t) = Ve st in the time domain. Assume no initial capacitor voltage or inductive current at t = 0. Draw the transformed network in the s

#title.Shockley diode, I want proof of shockley diode equation with all ste...

I want proof of shockley diode equation with all steps

Show the equivalent nor realizations of basic not, (a) Show the equivalent ...

(a) Show the equivalent NOR realizations of the basic NOT, OR, and AND gates. (b) Show the equivalent NAND realization of the basic NOT, AND, and OR gates.

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd