Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Q. Explain working of TTL NAND gate?
The TTL logic family uses only transistors instead of a combination of transistors and diodes. TTL has the same high and low ranges as DTL. TTL is the most popular BJT logic family. A primary reason for the popularity of TTL over DTL is its higher speed. TTL has a typical fan-out of 10 or more, small propagation delays on the order of 2 to 10 ns, and a power consumption of about 2 mW. By contrast, DTL has a typical fan-out of 8 to 10, a propagation delay on the order of 30 to 90 ns, and a power consumption of around 15 mW. The noise margins and fan-out of DTL are generally better than those of RTL, but the switching speeds are about the same. The emitter-coupled logic (ECL) family is also available with increased switching times, although not discussed here in any detail.
The name arises from the common attachment of the emitters of the input transistors. The propagation delays are on the order of 1 ns, but the power consumption is quite high (on the order of 25 mWper gate). Low power consumption combined with relatively small noise margins (< 0.3 V) has made TTL a popular choice and, in particular, the high-speed Schottky diode TTL gates.
A typical TTL NAND gate is shown in Figure. Transistor T1 is a multiple-emitter transistor (npn BJT) which acts as an AND gate. Replacing the base-emitter and base-collector junctions with diodes, T can be represented as shown in Figure.
Q. A50-kW, 230-Vcompound generator has the following data: armature-circuit resistance 0.05 , series-field circuit resistance 0.05 , and shunt- field circuit resistance 125 . As
i have question
Normal 0 false false false EN-IN X-NONE X-NONE RECTIFIERS AND INVERTERS
Q. Consider an RL series circuit excited by (a) v(t) = 20e -2t V, and (b) v(t) = 20 V. Determine the forced component of the voltage across the inductor for R = 2 and L = 2H.
Write down about the following terms: (i) Pirani Gauge (ii) Rotameter (iii) Hot wire Anemometer (iv) Drag Force Flow Meter
simplified common base hybrid model
Drift Current and Diffusion Current : There are two mechanisms in which electrons and holes move through a semiconductor. One of these is termed as drift and other is diffusi
why bypass capacitor is used
Q. Three identical impedances of 30 30° are connected in delta to a three-phase 173-V system by conductors that have impedances of 0.8 + j0.6 each. Compute the magnitude of the l
For the amplifier circuit shown below estimate the mid band voltage gain if the EARLY voltage (V A ) of the current mirror transistors is 80 volts. Assume the d.c biasing is optim
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +91-977-207-8620
Phone: +91-977-207-8620
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd