Q. Explain the drain and transfer characteristics of P-channel enhancement MOSFET.

In p-channel enhancement MOSFET here is a n-type substrate and p doped regions under drain and source regions. The fabrication begins with a base (the substrate) that is highly resistive n-type semiconductor. The base forms the body of the transistor. It is needed to control the channel. Diffused into the body are two low-resistivity p-type regions that are separated by an n-type substrate. One of the two regions is called the drain and the other is the source. A narrow p-type channel is also fabricated in the region between the drain and the source. The p-type channel behaves like a conducting bar that connects the drain to the source.

To create a gate terminal for the P-DFET, a thin layer of silicon dioxide (SiO2 ) is grown over the surface of the p-channel. Finally, a thin film of aluminum is deposited over the insulating layer of silicon dioxide. The entire thin film acts as the gate of a P-DFET.