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Q. For an n-channel JFET with V A = 350 V, I DSS = 10 mA, and V P = 3V, find V DS that will cause i D = 11 mA when v GS = 0.
State the functions of a fuse. Fuse is a protective device that made of a thin wire or strip. This strip or wire is placed with the circuit this has to protect, therefore the
Q. Show the Storage Layout of digital system? The IEEE floating point numbers have three basic components: the sign, the exponent, and the mantissa. A mantissa is composed of t
Designated Consumers - Features of Energy Conservation The Act gives the list of designated consumers, which involves the energy intensive industries, Railways, Port Trust, Tr
advantages and disadvantages of wein''s bridge
Design 8:1 Mux for a given function, f=Σ (0, 1,5,7,9, 13)
Switching Characteristics The switching characteristic of an IGBT during turn on and turn off time all shown in the sum of delay time and rise time gives the total tur
draw a developed single simplex wave winding havig 17 number of coils and 4 number of poles
Q. Define Power-Supply Rejection Ratio? An op amp's ability to disregard changes in power-supply voltage is measured by the power- supply rejection ratio (PSRR), which is speci
Consider the circuit of Figure (a) with v S (t) = 10 cos ωt. Use the piecewise-linear model of the diode with a threshold voltage of 0.6 V and a forward resistance of 0.5 to dete
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