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Sub Threshold
The sub threshold I-V curve depends exponentially on the threshold voltage, introducing a strong reliance on any manufacturing variation that influences threshold voltage; for instance: differences in oxide thickness, junction depth/body doping which change the degree of drain-induced barrier lowering. The resultant sensitivity to fabricational variations complicates optimization for leakage and performance.
Figure: MOSFET drain current vs. drain-to-source voltage for various values of VGS - Vth; the boundary in between linear (Ohmic) and saturation (active) modes is pointed out by the upward curving parabola.
Figure: Cross section of a MOSFET that is operating in the linear (Ohmic) region; strong inversion region exist even near drain
Figure: Cross section of a MOSFET operating in the saturation (active) region; channel shows pinch-off near drain
Break over voltage of Finger Voltage The minimum forward voltage when the gate is opened at which SCR starts conducting heavily is called the break over voltage. To
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