Sub threshold, Electrical Engineering

Assignment Help:

Sub Threshold

The sub threshold I-V curve depends exponentially on the threshold voltage, introducing a strong reliance on any manufacturing variation that influences threshold voltage; for instance: differences in oxide thickness, junction depth/body doping which change the degree of drain-induced barrier lowering. The resultant sensitivity to fabricational variations complicates optimization for leakage and performance.

1618_sub threshold 1.png

Figure: MOSFET drain current vs. drain-to-source voltage for various values of VGS - Vth; the boundary in between linear (Ohmic) and saturation (active) modes is pointed out by the upward curving parabola.

 

2100_sub threshold 2.png

Figure: Cross section of a MOSFET that is operating in the linear (Ohmic) region; strong inversion region exist even near drain

 

939_sub threshold 3.png

Figure: Cross section of a MOSFET operating in the saturation (active) region; channel shows pinch-off near drain


Related Discussions:- Sub threshold

Zener Diode, A Zener diode has the specifications VZ=6.8V and PDmax.=500mW....

A Zener diode has the specifications VZ=6.8V and PDmax.=500mW. Assume RZ=0. (a) Find the maximum allowable current iZ when the Zener diode is acting as a regulator. (b) If a sing

Transparent latch d flip flop, Transparent latch D flip  Flop A typica...

Transparent latch D flip  Flop A typical  example  of this  type of D flop  is 7475 shown  in figure when CLK  connected is enable signal is high and the flip  flop  is enabled

Explain in brief about the robots, Explain In brief about the Robots - ...

Explain In brief about the Robots - Robot is programmed with a series of instructions that enable it to carry out a series of tasks - On the other hand, an operator manually

Discuss crp, Question 1 Explain the construction of telephone network ...

Question 1 Explain the construction of telephone network Question 2 What is out-of-band signaling? Explain Question 3 Describe STP (Signaling Transfer Point) Questio

Terminal of a battery having 10 cells connected in series, An external resi...

An external resistance of 10 Ω is linked to the terminal of a battery having 10 cells connected in series. Emf for every cells and internal resistance  is 1.5V and 0.2Ω . Find the

Determine paper is hygroscopic and absorbent or not, Paper is hygroscopic a...

Paper is hygroscopic and absorbent. This statement is true or false. Ans: Paper is hygroscopic and absorbent. This statement is true.

Magnetic Circuits:, A circular ring of magnetic material has a mean length ...

A circular ring of magnetic material has a mean length of 1m and a cross sectional area of .001m^2.A sawcut of 5mm width is made in the ring . calculate the magnetizing current req

Delay time - power semiconductor devices , Delay time ( t d ) Initiall...

Delay time ( t d ) Initially a thyristor  remains  in forward  blocking  stat when  anode to cathode forward  voltage  is applied  and gate  to cathode circuit is opened. As t

Explain the purpose of the i/o instructions in and out, Explain the purpose...

Explain the purpose of the I/O instructions IN and OUT. The IN instruction is used to move data from an I/O port into the accumulator. The OUT instruction is used to move d

Equivalent circuit of a field-effect transistor, Q. The circuit shown in Fi...

Q. The circuit shown in Figure is the equivalent circuit of a field-effect transistor (FET) amplifier stage. (a) Determine the y-parameters. (b) For values of µ = g m /g d >

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd