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Semiconductor Devices:
We have studied semiconductor devices. Firstly, we understand what semiconductors in terms of energy band diagrams are. Then we understand what is doping of semiconductors, what are p-type and n-type semiconductors. Diodes, two terminal semiconductor devices, are studied in terms of its I-V characteristics as well as Zener effect in semiconductor diodes and use of Zener diodes. Transistors, three terminal semiconductor devices, are the most important components of today's digital integrated circuits. A detailed explanation on Bipolar Junction Transistor (BJTs), MOSFET, JFET has been given, particularly their operational principles, biasing and small signal equivalent circuits. Next we have investigated the power semiconductor devices. In first section on switches, we have studied how a diode, transistor and MOSFET can be used as a switch in integrated circuits. We have also introduced to other power semiconductor devices by drawing its structure and symbol, explaining operational principles with the help of equivalent circuits viz. SCRs, TRIACs and IGBTs.
following on from the first tma in this module, produce a design report for one design of the product based on one of the scenarios covered on the following pages.
Q. Working of Equalizer circuit? Equalizer circuit: Equalizers are combination of passive components (capacitors, resistors and so on) that are used to regulate the amplitude a
Q. Discuss the nature of sinusoidal signal? Discuss the nature of evenness and oddness of: (a) The sinusoidal signal x(t) = A cos(2πf 0 t + θ). (b) The complex exponentia
A LIT (linear time-invariant) system, impulse response h [ n ], is described by: (a) Show the block-diagram representation for this FIR filter (only use multiplier, adder
To demonstrate a practical method of testing semiconductor diodes.
Q. A balanced delta-connected load with a per-phase impedance of 12 + j9 is supplied by a 173-V, 60-Hz three-phase source. (a) Determine the line current, the power factor, th
Metal-Oxide-Semiconductor Structure A traditional metal-oxide-semiconductor abbreviated as MOS structure is acquired by growing a layer of silicon dioxide (SiO 2 ) on top of
Effect of Frequency a.From equation for given H p and μ P v α √f b.From equation the depth of penetration for a given material δ α 1/ √f c.From equation hyst
Thermal noise This is the most significant noise in an ampli?er. It is produced by random movements of electrons in the resistors. This is caused by the ?uctuations in the volt
It is required that the current floor position be displayed as a number 1, 2, or 3 on a seven segment LED display on floor 1, which is quite close to the LCU. Data Storage It
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