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Reverse bias
Reverse biased generally refers to how a diode is employed in a circuit. If a diode is reverse biased, the voltage at the cathode is gets higher than that at the anode. Hence, no current will flow till diode breaks down. Connecting the P-type region to the negative terminal of the battery and the N-type region to the positive terminal corresponds to reverse bias. The connections are demonstrates in the following diagram:
Figure: (a) Blocks of P and N semiconductor in contact have no exploitable properties. (b) Single crystal doped with P and N type impurities develops a potential barrier.
This type of separation of charges at the PN junction constitutes a potential barrier. This potential barrier has to be overcome through an external voltage source to form the junction conduct.
Figure: A silicon p-n junction in reverse bias.
The creation of the junction and potential barrier occurs during the manufacturing process. The magnitude of the potential barrier is a function of the materials employed in manufacturing. Silicon PN junctions comprises a higher potential barrier than germanium junctions.
Sectoral Overview and Enabling Framework Previously, you have studied about several Acts and Policies relevant to the power sector, their aims, main features and implications
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