Reverse bias, Electrical Engineering

Assignment Help:

Reverse bias

Reverse biased generally refers to how a diode is employed in a circuit. If a diode is reverse biased, the voltage at the cathode is gets higher than that at the anode. Hence, no current will flow till diode breaks down. Connecting the P-type region to the negative terminal of the battery and the N-type region to the positive terminal corresponds to reverse bias. The connections are demonstrates in the following diagram: 

728_Reverse Bias 2.png

Figure: (a) Blocks of P and N semiconductor in contact have no exploitable properties. (b) Single crystal doped with P and N type impurities develops a potential barrier.

This type of separation of charges at the PN junction constitutes a potential barrier. This potential barrier has to be overcome through an external voltage source to form the junction conduct.

523_Reverse Bias 1.png

Figure: A silicon p-n junction in reverse bias.

The creation of the junction and potential barrier occurs during the manufacturing process. The magnitude of the potential barrier is a function of the materials employed in manufacturing. Silicon PN junctions comprises a higher potential barrier than germanium junctions.


Related Discussions:- Reverse bias

Magnetic circuits, Magnetic circuits To  see  how  this   is  used   i...

Magnetic circuits To  see  how  this   is  used   in  practice, consider a coil of N turns wound onto a closed ring shaped former with a very high (note:    r (steel) = 200

Develop a two-dimensional addressing system, Q. Suppose a ROM holds a total...

Q. Suppose a ROM holds a total of 8192 bits. (a) How many bits long would the individual addresses have to be? (b) If the bits are organized into 8-bit memory words or bytes,

What are shift register counters, What are Shift Register Counters? Two...

What are Shift Register Counters? Two of the main common types of shift register counters are the Ring counter and the Johnson counter and They are basically shift registers wi

Tariff policy - electricity policies, National tariff policy: The Centr...

National tariff policy: The Central Government notified the National Tariff Policy on January 6, 2006, for the power sector in line along with the Section 3 of the EA, 2003. Wi

Calculate the rms voltage generated in each phase, Q. Consider an elementar...

Q. Consider an elementary three-phase, four-pole alternator with a wye-connected armature winding, consisting of full-pitch concentrated coils.  Each phase coil has three turns,

Find the thevenin equivalent of the circuit, (a) Find the Thevenin equivale...

(a) Find the Thevenin equivalent of the circuit shown in Figure (a) at the terminals A-B. (b) Determine the impedance that must be connected to the terminals A-B so that it is m

For an n-channel jfet find voltage, Q. For an n-channel JFET with V A = 35...

Q. For an n-channel JFET with V A = 350 V, I DSS = 10 mA, and V P = 3V, find V DS that will cause i D = 11 mA when v GS = 0.

How DRAM is different from SRAM, How DRAM's are different from SRAM's?  Why...

How DRAM's are different from SRAM's?  Why DRAMs are said to employ address multiplexing? Dynamic RAM (DRAM) is fundamentally similar as SRAM, except that this retains data for

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd