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Q. Find the parameter values VT and IDSS for a p- channel MOSFET with iD = 0 when vGS ≤-3 V, and iD = 5 mA when vGS = vDS =-8V.You may neglect the effect of vDS on iD.
For the circuit in figure, find the current through each resistor.
Q. Show Crystal - Oscillator Circuits? The simplest crystal-oscillator circuit is shown in Fig. 6-2A. An equivalent circuit is shown in Fig. 6-2B., where C4 represents the grid
Find a minimum two level, multiple-output AND-OR gate circuit to realize these functions (eight gates minimum). F 1 (a,b,c,d) =Σm(10,11,12,15) +D (4,8,14) F 2 (a,b,c,d) =Σm(4
Factors Affecting to High Technical Losses Large Scale Rural Electrification Large scale rural electrification programmed undertaken in the country resulted in long LT li
Q. Write a short note on heat sink For transistors handling small signals ,the power dissipated at the collector is small.Such transistors have little chances of thermal runawa
Modify the design of the circuit shown in FIGURE and draw a circuit diagram to provide rotary actuation in both directions using a single direction pump (to replace the bi-directio
Information Processing: Information processing is the key to improving cutting and productivity costs of excess work. Converting information to a computerized format in GIS i
Calculate the approximate donor binding energy Calculate the approximate donor binding energy for Si (r = 11.7,m x n = 1.18 m 0 ) Solution: From E= m * n q 4 / 2(4 πε 0
Pinch off Voltage: The current in N-JFET because of a small voltage V DS is described by: I DSS = (2a) W/L (qN d μ n V DS ) In which 2a = channel thickness
In continuation of Part-B, the student is required to configure an engine management system for the proposed engine and produce a report including the following: A preamble
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