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Ion implantation equipment typically having of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be entrenched. Each ion is typically a single atom, and thus the actual amount of material implanted in the target is the integral over time of the ion current.
Ask question #Minimum 100 words accepted.hardness of bore water is less than that of sea water-justify
construction and working of calomel and Ag-AgCl electodes
A double riveted double cover butt joint is used for connecting plates 1.2 cm thick. The diameter of the rivets is 2.2 cm. The permissible stresses in tension - 100 N/mm2 The per
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Methane containing 4 mol% N 2 is flowing through a pipleline at 105.1 kpa and 22 °C. To check this flow rate, N 2 at the same temperature and pressure are introduced to the piple
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Ion implantation equipment typically having of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a
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