What is the thickness of the oxide grown

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1. A silicon sample is oxidized in dry O2 at 1200? C for one hour.

(a) What is the thickness of the oxide grown?

(b) How much additional time is required to grow 0.1 µm more oxide in wet O2 at 1200? C?

2. Find the parameter γ for the photoresists shown in Figure 2.13.

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Reference no: EM131297661

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