Determine what is the depth below the surface

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Reference no: EM13286020

Consider the impurity diffusion of gallium into a silicon wafer. If gallium is diffused into a silicon wafer (with no previous gallium in it) at a temperature of 1100oC for 3h, what is the depth below the surface at which the concentration is 1022 atoms/m3 if the surface concentration is 1024 atoms/m3? Assume the diffusion coefficient, D, for Ga in Si at 1100oC is 7.0 x 10-17m2/s.

Reference no: EM13286020

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