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Q. The unit impulse response h(t) of a linear system is h(t) = 5e-t cos(2t - 30°). Determine H(s).
Q. A silicon npn BJT is biased by the method shown in Figure, with R E = 240 , R 2 = 3000 , and V CC = 24 V. The operating point corresponds to V BEQ = 0.8V, I BQ = 110 µA,
Magnetic permeability and the B/H curve To measure the relationship between field strength H and flux density B for a material, a sample is made into a closed ring and a magne
whatis motor protection
a) Define the blending function reparanetrization. b) Four position vectors P1[0 , 0], P2[1 ,1], P3[2 ,-1] ,P4[3, 0] are provided with tangent vectors P1'[1,1] and P4'[1,1]. Cal
Explain the phenomenon of breakdown in dielectric materials. Breakdown in dielectric materials: This electric strength at breakdown is explained as the minimum electric stress
what''s robust?
advantages and disadvantages of direct and r c coupling
As we all know the next century demand for wireless technology is expected to be the commercial implementation of Software Defined Radio (SDR) paradigm to improve base station effi
Q. Evaluate complex power in power system? The complex power ¯S in a single-phase systemis the complex sum of the real (P) and reactive (Q) power, expressed as follows:
I´m looking for some help to identify some electronic parts, i have this led driver with preset dim levels that i can reach with switching the power on and off. The driver worked r
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