Switching characteristics, Electrical Engineering

Switching Characteristics

The switching  characteristic  of an IGBT  during  turn on and turn off time all  shown  in the sum of delay time  and rise time gives  the total  turn on time  here delay time is the time during which collector to  emitter voltage falls 10% it means from VCE to 90% of VCE  where VCE=  initial collector emitter voltage. The rise time  is the time during  which collector  current  from it initial leakage current  ( ICE)  to 10%  of IC where IC =final  of collector current therefore,

 Ton = T J  + tr

The  on state  forward voltage drop across the  device is also  shown in figure  as VCES.  The turn off  time of IGBT  can be  divide into there intervals delay time Ido initial  and final fall  time therefore  total turn  off times 

Toff = t do + T if + tff

The delay  time during  turn off defined as a time during  which  the gate voltage  falls  from VGE to threshold voltage  VGE. Due  to this collector current  falls from IC  to 90% of IC. At the  end of this  delay  time VCE being  to rise.  During  initial  fall time  tif collector current falls forms 90%  to 20%  of initial  value of IC and VCE rises  from on state  forward drop to 10%  of VCE,. During  final fall  time trf  collector current falls from 20% to 10%  of initial  of IC and VCE rises from  1% of VCE final  value of VCE

Posted Date: 4/2/2013 6:24:45 AM | Location : United States







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