Switching characteristics, Electrical Engineering

Assignment Help:

Switching Characteristics

The switching  characteristic  of an IGBT  during  turn on and turn off time all  shown  in the sum of delay time  and rise time gives  the total  turn on time  here delay time is the time during which collector to  emitter voltage falls 10% it means from VCE to 90% of VCE  where VCE=  initial collector emitter voltage. The rise time  is the time during  which collector  current  from it initial leakage current  ( ICE)  to 10%  of IC where IC =final  of collector current therefore,

 Ton = T J  + tr

The  on state  forward voltage drop across the  device is also  shown in figure  as VCES.  The turn off  time of IGBT  can be  divide into there intervals delay time Ido initial  and final fall  time therefore  total turn  off times 

Toff = t do + T if + tff

The delay  time during  turn off defined as a time during  which  the gate voltage  falls  from VGE to threshold voltage  VGE. Due  to this collector current  falls from IC  to 90% of IC. At the  end of this  delay  time VCE being  to rise.  During  initial  fall time  tif collector current falls forms 90%  to 20%  of initial  value of IC and VCE rises  from on state  forward drop to 10%  of VCE,. During  final fall  time trf  collector current falls from 20% to 10%  of initial  of IC and VCE rises from  1% of VCE final  value of VCE


Related Discussions:- Switching characteristics

Ac-dc voltages , To do the basic laboratory experiments related to the elec...

To do the basic laboratory experiments related to the electrical engineering course, students need to have some basic understanding about the measuring tools, apparatus, components

Describe common-mode rejection ratio, Q. Describe Common-Mode Rejection Rat...

Q. Describe Common-Mode Rejection Ratio ? When there is a common-mode input voltage, i.e., when the input signals are equal and greater than zero, the output voltage of an idea

MIMO, MIMO downlink mode uses

MIMO downlink mode uses

Dsp, A pure sine wave with a frequency of 100Hz is sampled at 150Hz. At whi...

A pure sine wave with a frequency of 100Hz is sampled at 150Hz. At which one of the following frequencies would you expect an alias?

Explain contact resistance, Explain Contact resistance. Contact resista...

Explain Contact resistance. Contact resistance: It is measured as the voltage drop from tail to tail of the mated contacts along with specified current flowing through the cont

Jfet ampli?er circuit, Q. For the CS JFET ampli?er circuit of Figure, R D ...

Q. For the CS JFET ampli?er circuit of Figure, R D = 2k and R L = 3k. The JFET with ro = 15 k has a voltage gain A v1 =-4.5 when the entire source resistance is bypassed. Fin

Characteristics of unijunction transistor, Characteristics of  unijunction...

Characteristics of  unijunction transistor: Characteristics : The static emitter characteristic of UJT at a given inter base voltage VBB in shown in fig. From fig., it is no

The fundamental frequency , The frequency domain representation of a signal...

The frequency domain representation of a signal is shown  below: i. What are the fundamental frequency and the corresponding period of this signal (shown in Figure )? ii.  Pl

Define shunt capacitors and reactors, Define Shunt Capacitors and Reactors ...

Define Shunt Capacitors and Reactors Shunt capacitors absorb leading VArs (i.e. they are used to supply lagging VArs) whereas reactors are used to absorbs lagging VArs. Capacit

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd