Semiconductor diode, Electrical Engineering

Semiconductor Diode:

the semi conductor diode is formed by simply bringing n and p tripe material together (constructed from same base ge and si), at the instant the two material are joined the electrons and holes in the region and functions will combine  resulting in lack of carriers in the reason of junctions. The reason of uncover positive and negative ions is called the depletion reasons due to the depletion   of carriers in this region.

In absence of applied bias voltage the net flow of charge in any directions for the semi conductor diode is zero, hence no current is flow.

If an external voltage v is applied is    the p-n junctions such that positive terminal to n type and negative terminal to p type material , then the depletions layer will increased and only reverse leakage current minority carries will flow.

A forward condition is establish by Appling the positive potential p type material and negative potential to n type material and holes in the p toe material with the ions near the boundary and reduce the width the depletion regions. As the applied bias increase in magnitude, the depletions regions will continue to decrease in Edith until a flood of electrons can pass through the junctions, resulting in an exponential rise in the current in the forward biased regions of characteristics.

Posted Date: 2/8/2013 2:24:31 AM | Location : United States







Related Discussions:- Semiconductor diode, Assignment Help, Ask Question on Semiconductor diode, Get Answer, Expert's Help, Semiconductor diode Discussions

Write discussion on Semiconductor diode
Your posts are moderated
Related Questions
Blanking circuit: The saw tooth sweep voltage applied to the X places moves beam across the CRT tube in a straight horizontal line from left to right during the sweep or trace tim

Systems such as those encountered in mechanics, thermodynamics, and hydraulics can be represented by analogous electric networks, from the response of which the system characterist

Q. On a per-phase basis, let v = √2 V cos ωt and i = √2 I cos (ωt - θ). (a) Express the instantaneous power s(t) in terms of real power P and reactive power Q. (b) Now consid

KPI for Second Stage Implementation These KPIs deal along with the quality of the relationship among a supplier and a user (customer). They are significant to potential custom

Q. Discuss the operation of a transistorized phase shift oscillator with the help of a diagram? Explain the phase shifting circuit? An oscillator is a circuit which converts elec

Explain Polymers and their applications. Polymeric materials or plastics contain a large group of organo or organic metallic high molecules compound. The common properties of s


Q. Sections construct in FORTAN? The sections construct is a no iterative work sharing construct which causes structured blocks to be shared among threads in team. Every struct

Q. Consider an RC parallel circuit excited by (a) i(t) = 20e -2t A, and (b) i(t) = 20 A. Find the forced component of the current through the capacitor for R = 2  and C = 2F.

1. The photon fluence rate is 10 7 photons mm -2 sec -1 for a beam of γ rays. One fourth of the photons have energies of 100 keV, one half have energies of 80 keV and the remain