Evaluate discrete-time signal, Electrical Engineering

Consider the following signals, sketch each one of them and comment on the periodic nature:

(a) x(t) = A cos(2πf0t + θ), where A, f0, and θ are the amplitude, frequency, and phase of the signal.

(b) x(t) = ej(2πf0t+θ) , A> 0.

(c) Unit step signal u-1(t) defined by u-1(t) = 1802_Evaluate Discrete-time signal.png

(d) Discrete-time signal x[n] = A cos(2πf0n + θ), where n is an integer.

Posted Date: 6/28/2013 5:49:22 AM | Location : United States







Related Discussions:- Evaluate discrete-time signal, Assignment Help, Ask Question on Evaluate discrete-time signal, Get Answer, Expert's Help, Evaluate discrete-time signal Discussions

Write discussion on Evaluate discrete-time signal
Your posts are moderated
Related Questions
Speed  Control of Three  Phase Induction Motors Three  phase  induction motors are invariably used in the application where in speed in  required to be  constant  or adjustabl

a. Given a timer with a terminal count and a clock frequency of 10 MHz measure the following: (i) Range & Resolution (ii) Terminal count values needed to measure 3ms interval

difference between cmp and sub in microprocessor.

Q. What do you mean by Source Encoding? After the quantization of message samples, the digital system will then code each quantized sample into a sequence of binary digits (bit

Define the general purpose embedded system. a. General purpose microprocessor For illustration, Intel 80x86, Motorola 68HCxxx or Sparc b. Embedded general purpose process

Q. A current i(t) = 20 cos(2π × 60)t A flows through a wire. Find the charge flowing, and the number of electrons per second that are passing some point in the wire.

I am getting humming noice in speaker when I connect to laptop on ac when I put it on dc (battery) it''s dispear . Please help

how capacitor works as transducer?

Discuss classification of conducting materials into low resistivity and high resistivity materials. Conducting materials are categorized as low resistivity materials and high r

Given an n-channel enhancement MOSFET having V T = 4V, K = 0.15 A/V 2 , I DQ = 0.5A, V DSQ = 10 V, and V DD = 20 V. Using the dc design approach outlined in this section, dete