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Q. For an n-channel JFET with V A = 350 V, I DSS = 10 mA, and V P = 3V, find V DS that will cause i D = 11 mA when v GS = 0.
In a ferromagnetic material the state of flux density is as follows when external magnetic field is applied to it. (A) Increased (B) Becomes zero (C) Remains unchang
There is a force on the plunger required to do to move it into or out of the gap and work must be done by or against this force. The conservation of energy dictates that the change
B-H curve of SM2CO17
example
Explain Atomic structure and Energy Band Diagram of Germanium. Germanium : This is one of the most common semiconductor material utilized in the application in electronics.
region of convergence of (Z+2)*(12z-1)/((3z-1)*(4z+1 ))
Explain electrical contact materials. Electrical contact materials: some elements, in their relatively pure forms as copper, nickel, molybdenum, palladium, silver, tungsten and
Power Transistor A power transistor is a three layer PNP or NPN semiconductor device having two junctions. Three terminals of power transistors are collector emitter
Q. What do you mean by Dial Pulses? Dial Pulses: Dial pulsing (many times known as rotary dial pulsing) is the method originally used to transfer digits from a telephone set
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