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Q. Write a short note on heat sink
For transistors handling small signals ,the power dissipated at the collector is small.Such transistors have little chances of thermal runaway .However in power transistors ,the power dissipated at the collector junction is larger .This may cause the junction temperature to rise to a dangerous level .We can increase the power handling capacity of a transistor if we make a suitable provision for rapid conduction of heat away from the junction .This can be achieved by using a sheet of metal called heat sink.As the power dissipated within a transistor is predominantly the power dissipated at its collector base junction ,sometimes the collector of the power transistor is connected to its metallic base The case of the transistor is then bolted on to a sheet of metal .The sheet serves a heat sink. Connecting heat sink to a transistor increases the area from which heat is to be transferred to the atmosphere .Heat moves from the transistor to the heat sink by conduction ,and the it is removed from sink to the ambient by convection and radiation.
Q. A JK flip-flop is shown in Figure (a). (a) Modify it to operate like the D flip-flop of Figure (b). (b) Modify the JK flip-flop to operate like the T flip-flop of Figure (
You will develop a simulation that will consist of the following five components: Controller: This script component controls the simulation. It shall permit the user to: 1. C
A heater element is made of nichrome wire having resistivity equal to 100 × 10 -8 ohm-m. The diameter of the wire is 0.4mm. Calculate the length of the wire required to get a resi
Hi all i want a conclusion for V-I characteristic curve of Silicon Diode (I) using Oscilloscope
Q. What is the Voltage controlled resistance region? In this region the JFET can actually be employed as a variable resistor whose resistance is controlled by the applied gate
Q. Two balanced, three-phase, wye-connected loads are in parallel across a balanced, three-phase supply. Load 1 draws 15 kVA at 0.8 power factor lagging, and load 2 draws 20 kVA at
1. Find the current through each component, in polar form, using mesh analysis. The source voltages are rms with an angle of 0 degrees. 2. Find the current t
Q. A depletion MOSFET is given to have large V A , V P = 2.8V, I DSS = 4.3 mA, v DS = 4.5V,and v GS = 1.2V. (a) Is theMOSFEToperating in the active region? (b) Find iD.
Q. How time slot interchange switch works in time multiplexed time switching, Elucidate using schematic. Ans: Switches for which inlets and outlets are trunks that carry tim
a) Define the surface of revolution? b) What do you mean by ruled surface?
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