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A bakelite capacitor is to be constructed to have a capacitance of 0.04µF and to have a steady workingpotential of 1kVmaximum. Allowing a safe value of field stress of 25MV/m find
(a) the thickness of bakelite needed,
(b) the area of plate needed if the relative permittivity of bakelite is 5,
(c) the maximum energy stored by the capacitor and
(d) the average power developed if this energy is dissipated in a time of 20µs.
Dirive an expretion for low of succecive disintigretion
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explain the formation of energy band in intrinsic semiconductor
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