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Both DTL and TTL are based on the saturating BJT inverter. The transistor acts as a switch that connects or disconnects the collector and emitter. The switch is closed when sufficient base current is applied to saturate the transistor. While the BJT technologies have dominated during the 1970s, logic families based on MOSFET technology are nowmore widely used because of the advantages of fewer fabrication steps and generally lower power consumption. After PMOS and NMOS technologies, CMOS emerged as the dominant MOS technology and remains so today. Let us consider the simple MOSFET inverter with resistive load shown in Figure (a), quite similar in principle to the BJT inverter, although the circuit is rather impractical, as we shall see later. The load line for RD = 23 k and VDD = 7 V is shown along with the transistor I-V characteristics in Figure (b). On finding vout (= vDS) for different values of vin (= vGS), the voltage-transfer characteristic (vout versus vin) is plotted in Figure (c). By choosing the low range to be 0 to 3 V (i.e., less than the threshold voltage) and the high range to be 5 to 7 V, we can see that any input voltage in the low range gives an output of 7 V (high) and inputs in the high range give outputs in the low range. Thus, the circuit is seen to be an inverter.
Flex Routing : You can see that your labour will have been in vain unless you take steps to ensure that flexes are routed safely and well clear of possible sources of danger.
Note, the armature current is produced in pulses as the armature rotates under the poles, so the torque also pulsates. This can give rise to extra wear on bearings and the engin
Q. Explain the use of CRO for frequency measurement. Measurement of frequency: The frequency of the periodic signals is easily measured with a CRO. The frequency of a si
Explain how a p-n junction functions as a rectifier
Comparison of Analog-Modulation Systems The comparison of analog modulation systems (conventional AM, DSB SC, SSB SC, VSB, FM, and PM) can be based on three practical criteria:
IGBT ( Insulated Gate Bipolar Transistor ) IGBT stands for insulated gate bipolar transistor. It is having the advantages of both power MOSFET and BJT. In IGBT layer is P
cpopy 16 bit data Register pair Example : Copy 16 bit data 3 E 21H in register pair BC Solution :The statement is LXI B 3E 21H 16 bit data 3E 21H in reg
1. Explain the construction and working of Calomel electrode 2. Derive an expression for the electrode potential of a glass electrode. 3. What are ion selective electrodes
Q. For a BJT with vBE = 0.7V, I CBO = 4 nA, i E = 1 mA, and i C = 0.9 mA, evaluate α, iB,iSE, and β.
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