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Both DTL and TTL are based on the saturating BJT inverter. The transistor acts as a switch that connects or disconnects the collector and emitter. The switch is closed when sufficient base current is applied to saturate the transistor. While the BJT technologies have dominated during the 1970s, logic families based on MOSFET technology are nowmore widely used because of the advantages of fewer fabrication steps and generally lower power consumption. After PMOS and NMOS technologies, CMOS emerged as the dominant MOS technology and remains so today. Let us consider the simple MOSFET inverter with resistive load shown in Figure (a), quite similar in principle to the BJT inverter, although the circuit is rather impractical, as we shall see later. The load line for RD = 23 k and VDD = 7 V is shown along with the transistor I-V characteristics in Figure (b). On finding vout (= vDS) for different values of vin (= vGS), the voltage-transfer characteristic (vout versus vin) is plotted in Figure (c). By choosing the low range to be 0 to 3 V (i.e., less than the threshold voltage) and the high range to be 5 to 7 V, we can see that any input voltage in the low range gives an output of 7 V (high) and inputs in the high range give outputs in the low range. Thus, the circuit is seen to be an inverter.
What do you mean by internal data bus? Internal Data Bus: A bus which operates only in the internal circuitry of the CPU, communicating between the internal caches of memory
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A former employs a servant to look after his form house. He instructs the servant to keep a watch on his goat. So that he does not harm the kitchen garden, when the entrance-door
Three transformers are provided with the following rating values: 1) 2400/240 V, 55kVA, Req1 = (0.1 + 0.0Y) Ohm and Xeq1 = (0.15 + 0.XX) Ohm. 2) 240/120 V, 25kVA, Req1 = (0.1
how unbalanced effect in wave winding is considered to be balanced?
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Do you provide me matlab code for comparison the performance of decision feedback equalizer over MLSE
An abrupt silicon (n i = 10 10 cm -3 ) p-n junction consists of a p-type region containing 10 16 cm -3 acceptors and an n-type region containing 5 x 10 16 cm -3 donors. a)
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