Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Q. Sections construct in FORTAN?
The sections construct is a no iterative work sharing construct which causes structured blocks to be shared among threads in team. Every structured block is executed one time by one of threads in team. The syntax of portions construct is:
#pragma omp sections [set of clauses.]
{
#pragma omp section
structured-bloc
structured-block
.
}
The clause is one of the following:
private(list)
firstprivate(list)
lastprivate(list)
reduction(operator: list)
nowait
Absorption of radiation If an atom is initially in a lower state 1, it can rise to a higher stare 2 by absorbing a quantum of radiation. Photon of frequency v where E 1 and E
Question: a). For the circuit shown in figure state which operation is performed and draw the output waveform if measured between points A and B. The input signal is given in f
RAL Rotate Accumulator Left Through Carry Instruction This instruction rotates the content of the accumulator towards left by one bit. The D 0 bit moves to D 1 bit moves
Give an industrial look at modern CAM/CAD. Define explicit, implicit and parametric representations. What are the basic advantages of parametric representations over the impli
#quest explain cro..
design SR latch with universal logic gates.draw and explain the logic diagrams
What current must flow if 0.45 coulombs is to be transferred in 5 ms? Quantity of electricity, Q = It, then:
Q. Write notes on clamping ? When a signal drives an open-ended capacitor the average voltage level on the output terminal of the capacitor is determined by the initial charge
Explain Hall effect. Consider a slab of material wherein there is a current density J resulting by an applied electric field Ex in the x- direction. The electrons will drift al
Given an n-channel enhancement MOSFET having V T = 4V, K = 0.15 A/V 2 , I DQ = 0.5A, V DSQ = 10 V, and V DD = 20 V. Using the dc design approach outlined in this section, dete
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +91-977-207-8620
Phone: +91-977-207-8620
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd