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The potential difference created across the P-N junction due to the diffusion of electron and holes is called potential barrier.
For and for silicon
On the average the potential barrier in P-N junction is ~ 0.5 V and the width of depletion region ~ 10-6.
So the barrier electric field.
Illustrate the current-voltage (I-V) characteristic curves if a junction diode in reverse and forward bias.
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