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Q. On a per-phase basis, let v = √2 V cos ωt and i = √2 I cos (ωt - θ).
(a) Express the instantaneous power s(t) in terms of real power P and reactive power Q.
(b) Now consider the energy E associated with the instantaneous power and show that E = Pt, where t is the duration of the time interval in seconds.
Q. Explain the construction and operation of Enhancement MOSFET? The construction of an N-channel enhancement MOSFET is shown in figure below. Two highly doped N + regions are
Two single-phase 60-Hz sinusoidal-source generators (with negligible internal impedances) are supplying to a common load of 10 kW at 0.8 power factor lagging. The impedance of the
Q. Basic principles of electromechanical energy conversion? Energy available in many forms is often converted to and from electrical form because electric energy can be transmi
Limitations: 1. Silicon transistors do not function at voltages much higher than about 1,000 volts (SiC devices can be worked as high as 3,000 volts). In difference, electron
Q. Explain the term total harmonic distortion. Describes the functionary of a total harmonic distortion analyzer. Total Harmonic Distortion: Nonlinear behaviors of circuit el
Solve using data from the DC machine data sheet, using the "hot" resistance value for all calculations. Note that the value of K on the sheet is for rated (100%) field flux. Assum
the plot of amper circuital law by using matlap?
Q. The circuit shown in Figure is the equivalent circuit of a field-effect transistor (FET) amplifier stage. (a) Determine the y-parameters. (b) For values of µ = g m /g d >
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Explain Interrupts of 8085. a) Maskable interrupt b) Vectored interrupt c) Non maskable interrupt d) Hardware interrupt e) Software interrupt
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