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Explain term 'depletion layer' across a p-n junction
Rectifying action of p-n diode can be explained on the foundation of electronic structure of the semiconductor. When a pure semiconductor is doped to become n-type, Fermi level shifts up from the middle of the energy gap towards donor level. This is so because position corresponding to 505 probability of occupation moves up because of the relatively high concentration of donor electrons in conduction band. If crystal is p-type, Fermi level shifts down towards the acceptor level. When same crystal is doped to become ntype on one side and p-type on the other side, Fermi level has to be constant throughout the crystal in thermal equilibrium. This results in electron energy levels at the bottom of the conduction band in n-part to be lower than those in the p-part, by an amount equal to contact potential eVo as demonstrated in Fig a. Contact potential at the junction gives rise to energy barrier or depletion layer.
Hello. PVC processors use a very high molecular weight acrylic processing aid for production of Rigid PVC foamsheet of high thickness. I would like to know the type of Acrylic mate
Which of the following sets of quantum number is not possible: (1) n=3, l=+2, m=0,and s = +1/2 (2) n=3, l=0, m=0,and s = -1/2 (3) n=3, l=0, m=-1,and s = +1/2
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Optical glass: They contain phosphorous as replacement for most of all the silica and lead silicate, containing a little CaO 2 , the latter is capable of absorbing ultraviolet lig
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The electronic configuration of gadolinium (atomic no. 64) is: (1) [Xe]4s 8 5d 9 6s 2 (2) [Xe] 4s 1 5d 1 6s 2 (3) [Xe]4s 3 5d
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