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Explain protected mode addressing.
This addressing permits access to data and programs located as the first 1M byte of memory, with in the first 1M byte of memory. Addressing it extended section of the memory system needs a change to the segment plus an offset addressing scheme utilized with real mode memory addressing. While data and programs are addressed in extended memory, the offset address is until now used to access information located in the memory segment.
The segment register has a selector which selects a descriptor from a descriptor table. The descriptor illustrates the memory segment's location, access rights and length.
What is interrupt service routine? Interrupt means to break the sequence of operation. Whereas the CPU is executing a program an interrupt breaks the normal sequence of impleme
Explain the NAND Gates - Microprocessor? The NAND GATE is a AND gate with the output inverted. Consequently the outputs of a NAND gate would be the opposites of the outputs of a A
Illustrate the experts model of GPS System A fundamental expert system is made up of the below elements: Setting up an Expert System - Information is collected
Q. Counting to moduli other than 2 is a frequent requirement, the most common being to count through the binary-coded decimal (BCD) 8421 sequence. All that is required is a four-st
Give some applications of manganin. Manganin is alloy of nickel, copper and manganese. This is used shunts in measuring instruments, for making their coils and for making pr
explain how conduction take place in conductor
Define voltage divider rule Voltage drop at every resistor that connected by serial can be search by using voltage divider rules (VDR).
Q. Show how the conservation of power is satisfied by the circuit of Figure.
Refer to Figure 100. Assume MKS units. Given: R1= 4, R2=14, R3= 9, I4= 8, I5= 7. Determine: Ieq, Req, and V3.
Q. A silicon npn BJT is biased by the method shown in Figure, with R E = 240 , R 2 = 3000 , and V CC = 24 V. The operating point corresponds to V BEQ = 0.8V, I BQ = 110 µA,
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