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Explain protected mode addressing.
This addressing permits access to data and programs located as the first 1M byte of memory, with in the first 1M byte of memory. Addressing it extended section of the memory system needs a change to the segment plus an offset addressing scheme utilized with real mode memory addressing. While data and programs are addressed in extended memory, the offset address is until now used to access information located in the memory segment.
The segment register has a selector which selects a descriptor from a descriptor table. The descriptor illustrates the memory segment's location, access rights and length.
Bipolar Junction Transistor: Transistor construction: the emitter layer is heavily doped, the base is light doped and the collector is only lightly doped. Outer layer has wi
how we can say that 3 phase induction motor is short curcited practically?
1.) A three phase, D0 HP, 1765 rpm, BA0 V induction motor operating at three quarter load has an efficiency of 91% and a power factor of 87%. Determine active power, apparent pow
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Stratos Corporation is a privately held tablet semiconductor technology firm with bright growth prospects.The past 5 years have seen the firm evolve from a pure startup to a profit
Determine Impedance - Resultant current and Power factor: In series R-L circuit, illustrated in Figure , Determine 1. Impedance, 2. Resultant current, 3.
(a) Some antennas have a physical aperture area A that can be identified and is related to the effective area A e by A e = ρ a A, where ρ a is known as the aperture efficiency.
What is a coprocessor? It is a specially designed microprocessor which take care of mathematical calculations including integer and floating point data .it is intended to work
Q. A silicon BJT has an emitter current of 5m Aat 300 K when the BEJ is forward-biased by vBE = 0.7 V. Find the reverse saturation current of the BEJ. Neglecting ICBO, calculate iC
Positive Edge Triggered D Flip Flop In this type of D flip Flop ( 7475) shown in figure the output changes with positive edge of the CLK when CLK changes from 0 to 1
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