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Explain Lithography.
Lithography- This is one of the processes which is carried out throughout manufacture of integrated circuits. Silica oxide (SiO2) layer is thermally grown on the wafer surface. The pattern is transferred by mask to the oxide layer as given- A photo resist liquid is equally applied over the oxide layer and dried. Photo resist is a material that changes its solubility in exact organic solvents, while exposed to ultra violet light. Non-polymerised parts are after that dissolved using organic solvents. This oxide layer below these parts is here etched using net chemical etchant. Through, this process, the pattern is transferred from the mask to the oxide. Throughout next diffusion, the layer of SiO2 serves as a mask.
ANI AND Immediate with Accumulator Instruction 8 bit data specified in the instruction is logically AND with the contents of the accumulator. The result is stored in
Hi there i need help with design battery charger for electric scooter 24v battery. i have to design sechmatic diagram and PCB for it. using Altuim design software many thanks 006
For large number of measurements the mean is calculated by taking a sample. Each sample that is taken has a mean. The mean of various sample difference from sample and are known to
For the 3 bus system shown below all values are given in pu on a 100MVA base (a) Use Matlab functions lfgauss and lfnewton to find power flow solution for the system, accurate
Write a brief note on MMX technology. MMX (Multimedia extensions) technology adds 57 new types of instructions to the Pentium - 4 microprocessors instruction set. The MMX tech
What is meant by Wait State? This state is used by slow peripheral devices. The peripheral devices can transmitted the data to or from the microprocessor by using READY input l
what is the limitations of maximum power transfer thorem ?
Design a combinational logic circuit to convert XS3BCD code in to the standard 8421 BCD code.
Mode 1 In this mode transistor Q gets turned on by the positive output of the PWM. After that current flows through inductor L transistor Q then back to supply in thi
Q. An n-channel JFET having V P = 3.5 V and I DSS = 5 mA is biased by the circuit of Figure with V DD = 28 V, RS = 3000 , and R 2 = 100 k. If the operating point is given by
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