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1. The circuit shown below is a DC charging and discharging circuit. a. At t = 0 sec, switch S1 is thrown to position 1 ("pos1"). Write the mathematical expressions for V
Explain the suitability of aluminium that is used as electrical conducting materials. Aluminium : Conductors are appropriate for ambient and very high temperature. Use of alu
Determine i L (t) and v C (t) for t> 0 in the circuit given in Figure.
Tri State Devices Tri State devices have three states logic 1 logic 0 and high impedance. A tri state device ( Buffer/ Inverter) has three lines output enable as shown
Explain instruction sets of 8085. a) Data transfer group - MOV, MVI, LXI. b) Arithmetic group - ADD, SUB, INR. c) Branch group - JMP, JNZ, CALL. d) Logical group -
Compare memory mapped I/O with I/O mapped I/O. Memory Mapped I/O Scheme: In this type of scheme there is merely one address space. These address space is explained as all p
what is south africas perspective?
Q. (a) An ampli?er with F 0 = 3 or 4.77 dB, f 0 = 4 GHz, and BN = 14 MHz is used with an antenna forwhich T a =200K. The connecting path loss is 1.45, or 1.61 dB at a physical t
Explain factors that change the resistivity of conducting materials. Temperature- Electrical resistance of most metals rises with increase of temperature whereas those of sem
Consider a forward-biased diode with a load resistance. Let the static volt-ampere characteristic of the diode be given by Equations, and typically represented by Figure. (a) Fo
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