Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Diffusion Current :
The carrier currents are also due to concentration gradients in the doped material which lead to diffusion of carriers from high concentration region to low concentration region. A concentration gradient exists if either the number of holes or electrons is greater in one region as compared to the rest of the region. When a concentration gradient of carriers exists in a material, the charge carriers tend to move from the region of high concentration to the region of lower concentration. The process is called the diffusion and the current due to this process is called the diffusion current. Let us assume that at reference plane x, the density of holes is p per m3. Let the carriers have a mean free path of Ax and mean free time of at between collisions.
Total Current in a semiconductor
It is possible that a potential gradient and a concentration gradient may exist within semiconductor. In such a case, the total current is the sum of drift current due to potential gradient and the diffusion current due to charge carrier concentration gradient.
Q. How speech is transmitted in digital switching environment by using PCM/TDM? Ans: A digital carrier system is a communications system which uses digital pulses instead of
Find C and Rb
Q. Explain about Dial Pulses? Dial pulsing (sometimes known as rotary dial pulsing) is the method basically used to transfer digits from a telephone set to the local switch. Pu
Define Series VAr Compensation? For very long transmission lines, the inductive reactance of the line becomes so high that not much power can be transmitted through the line, s
Q. Three loads in parallel are supplied by a single phase 400-V, 60-Hz supply: Load A: 10 kVA at 0.8 leading power factor Load B: 15 kW at 0.6 lagging power factor Load C:
Measurements made on the self-biased n-channel JFET shown in Figure are V GS =-1 V, I D = 4 mA; V GS =-0.5V, I D = 6.25 mA; and V DD = 15 V. (a) Determine V P and I DSS .
Materials with 'hard' magnetic B/H characteristics often show a strong residual magnetism. This makes them suitable for making permanent magnets. If the ring material were magnetis
Q. Consider the dual-slope A/D converter of Figure. (a) Calculate the total charge on the integrator due to the input voltage Vin during the signal integration time T. (b) Ob
Q. Required Conditions for connecting two transformers in parallel? Ans: a) Voltage rating should be same b) Per unit impedance should be same c) Phase sequence should
Analogue Threshold switching a) Include a variable potential divider to the schematic diagram to control the transistor base voltage b) Include the potential divider compon
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +1-415-670-9521
Phone: +1-415-670-9521
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd