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Q. What Are the Differences Between Enhancement And Depletion Mosfet?
Depletion MOSFET:Here a slab of p_type material is formed from a silicon base and referred to as substrate. It is the foundation upon which the device will be constructed. In some cases the substrate is internally connected to a source terminal. Many discrete devices provide an additional terminal labelles SS resulting in a four terminal device. The source and drain terminals are connected through metallic contacts to n doped regions linked by an n channel. The gate is also connected to metallic contact surface but remains insulated from the n channel by a very thin silicon dioxide layer.SiO2 is particular type of insulator referred to as dielectric that sets up opposing electric fields within the dielectric when exposed to an externally applied field.
· When gate to source voltage is set to 0,by direct connection from one terminal to another a current is established through the channel.
· When VGS has been set at negative voltage, it will tend to pressure the electrons towards the p type substrate, the drain current is reduced .
· When VGS has been set at positive voltage the positive gate will draw additional electrons from the p type substrate and hence resulting in increase in current.
Ferromagnetic materials have some 'residual magnetism' even when the current (proportional to H) is zero. Material with strong residual magnetism are useful for making permanent ma
Tri State Devices Tri State devices have three states logic 1 logic 0 and high impedance. A tri state device ( Buffer/ Inverter) has three lines output enable as shown
Q. How do you differentiate between dual beam and dual trace oscilloscope? Sol. There are two separate vertical input channels A, B and these use separate attenuator and prea
what is the need of coupling
A four-pole, three-phase, wound-rotor induction machine is to be used as a variable-frequency supply. The frequency of the supply connected to the stator is 60 Hz. (a) Let the r
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