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The generator of AM EMFs consists of a battery-driven radiofrequency (RF) EMF generator connected to a 1.5 m long 50 ? coaxial cable, to the other end of which a stainless-steel spoon-shaped mouthpiece is connected via an impedance transformer. The RF source of the device corresponds to a class C amplifier operating at 27.12 MHz. The carrier frequency is AM with a modulation depth of 85±5%, whereas the modulation frequency is generated by a digital direct synthesiser with a resolution of 10-7. The treatment sequence is controlled by a microcontroller (Atmel AT89S8252, Fribourg, Switzerland), that is, duration of session, sequence of modulation frequencies and duration of each sequence can be programmed via PC over a RS232 interface. The RF output is adjusted to 100 mW into a 50 ? load, which results in an emitting power identical to that of the device used for the treatment of insomnia.
difference between path fuction and point fuction
Transistor as an amplifier: Figure: Amplifier circuit, standard common-emitter configuration. The common-emitter amplifier is planned that is why a small change i
Name the three modes used by the DMA processor to transfer data? The three modes are:- a) Signal transfer mode (cycling stealing mode) b) Block transfer mode c) Demand
Financing the power sector projects: Massive investment is required for the targeted expansion of the sector. It has been estimated at Rs. 9 lakh crores in the further 10 yea
Passive filters: Passive implementations of linear filters are based upon combinations of inductors (L), resistors (R), and capacitors (C). These sorts are collectively termed
Q. For the circuits shown in Figure, sketch the frequency response (magnitude and phase) of ¯V out / ¯V in .
how can we increase insulation resistance of sheet
The reversibility principle of electrical machines states that an electrical machine can be used to operate either as a motor, converting electrical to mechanical energy, or as a g
Q. For the capacitor shown in Figure connected to a voltage source, sketch i(t) and w(t).
Calculate the approximate donor binding energy Calculate the approximate donor binding energy for Si (r = 11.7,m x n = 1.18 m 0 ) Solution: From E= m * n q 4 / 2(4 πε 0
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