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The generator of AM EMFs consists of a battery-driven radiofrequency (RF) EMF generator connected to a 1.5 m long 50 ? coaxial cable, to the other end of which a stainless-steel spoon-shaped mouthpiece is connected via an impedance transformer. The RF source of the device corresponds to a class C amplifier operating at 27.12 MHz. The carrier frequency is AM with a modulation depth of 85±5%, whereas the modulation frequency is generated by a digital direct synthesiser with a resolution of 10-7. The treatment sequence is controlled by a microcontroller (Atmel AT89S8252, Fribourg, Switzerland), that is, duration of session, sequence of modulation frequencies and duration of each sequence can be programmed via PC over a RS232 interface. The RF output is adjusted to 100 mW into a 50 ? load, which results in an emitting power identical to that of the device used for the treatment of insomnia.
1) Draw the state diagram for the state machine described by Table 7.5 in the text. Note, the table shows the transition to the next state S* from the current state S for the next
Determine the shaft power output: A 6-pole, 50 Hz, 3-phase induction motor running on full load develops a useful torque of 180 Nm when the rotor emf frequency is 2 Hz. Determ
Q. A single-phase industrial plant consists of two loads in parallel: P1 = 48kW PF1 = 0.60 lagging P2 = 24kW PF2 = 0.96 leading It is operated from a 500-V, 60-Hz source.
What are CU and NEU in 8087? CU-Control unit NEU- Numeric extension unit. The numeric extension unit implements all the numeric processor instructions whereas the control un
Task 1 Use basic circuit theory to convert the "T" circuit below into the equivalent "π". Hint: Remember to disconnect the voltage source and the load. Task 2
) Design a suitable double –layer lap winding for a 6-pole dc armature with 18 slots
Notations that are used in transistor circuits:- h ie = h 11e = Short circuit input impedance h 0e = h 22e = Open circuit output admittance
Decoders and multiplexers are termed, medium scale integration (MSI) devices; this term implies that the device is complex in construction and usually its operation as well. Below
Practical application of rc coupled amplifer
Assume that an abrupt Si p-n junction with area 10-4 cm2 has NA=10 17 /cm 3 and ND=10 17 /cm 3 is working at room temperature. It is given that μ n = 700 cm 2 /v-s, μ P =250 cm
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