Continuity equation - zero electric field, Electrical Engineering

Assignment Help:

Continuity Equation:

Explain continuity equation and discus the special case of continuity equation when concentration is independent of time and with zero electric field.                           

                                                      Or

Explain carrier of life time and continuity equation with required figured.

(b) If a P-type semiconductor bar has width and thickness of 3 mm each, the measured value of current and Hall voltage are 20µA and 100mV respectively.  The Resistivity of the bar is 2 × 105?-cm and the applied magnetic field is 0.1 Wb/m2. Calculate the mobility of holes.

Sol. (a) The continuity equation states a condition of dynamic equilibrium for the density of mobile carriers in any elementary volume of the semiconductor. We know that no distributing the equilibrium concentrations of holes or electrons vary with time approaching the equilibrium value exponentially. In general, the carrier concentration in the body of a semiconductor is a function of both time and distance. The differential equation governing this functional relationship is called continuity equation.  This equation is based on the fact that charge can neither be created nor destroyed. Consider an infinitesimal element of volume of area A and length dx as shown in fig. Let p be the average hole concentration within this volume. Considering the problem dimensional, let the hole current Ip is only a function of X. As shown in fig., the current entering the volume at x+ dx is Ip+time t while at the same Ip time, the current leaving the volume at x+ dx is Ip + dlp. Thus more current leaves the volume for positive value of dlp.  Thus more current leaves the volume for a positive value of dlp. Hence within the volume, the decrease in the number of holes per second with in the volume is dlp/e, where e is the magnitude of charge so the decrease in hole concentration (holes per unit volume) per second due to current Ip is given by. The increase of holes per unit volume per second due to thermal generation g = p. while the decrease of holes per unit time per second due to recombination is P. hence the increase in holes per unit volume per second must be equal to the algebraic sum of the increase in hole concentration.


Related Discussions:- Continuity equation - zero electric field

Frequency stability of quartz crystals, Q. Frequency stability of quartz cr...

Q. Frequency stability of quartz crystals ? The amount of frequency deviation from the ambient temperature frequency over the operating temperature range. This deviation is ass

Smallest unit of information on a machine, Q. Smallest unit of information ...

Q. Smallest unit of information on a machine? Short for the binary digit the smallest unit of information on a machine. This term was first used in 1946 by the John Tukey, a le

Solar energy, can i use the direct solar energy from solar plate to charge ...

can i use the direct solar energy from solar plate to charge my laptop without a battery

Show jkff connected as a t flip-flop, Q. For a JKFFwith JK = 11, the output...

Q. For a JKFFwith JK = 11, the output changes on every clock pulse. The change will be coincident with the clock pulse trailing edge and the flip-flop is said to toggle, when T = 1

Write a brief note on common drain amplifier, Q. Write a brief note on comm...

Q. Write a brief note on common drain amplifier Since voltage at the gate-drain is more easily determined than that of the voltage at gate-source, the voltage source in the inp

Working out the function of a combination of gates, Working out the functio...

Working out the function of a combination of gates? Truth tables are able to be used to work out the function of a combination of gates. Inputs Outputs

Identification of the requirements of a fuel system, An automotive manufact...

An automotive manufacturing company is planning to bring out a new model of a compact car for the Indian market. One of the critical tasks is choosing an engine with a proper engin

Consider circuit to obtain complete solution for the voltage, Consider the ...

Consider the circuit of Figure (a) and obtain the complete solution for the voltage v C (t) across the 5-F capacitor and the voltage v x (t) across the 5- resistor.

Electron beam focused to a fine spot, Q. How is the electron beam focused t...

Q. How is the electron beam focused to a fine spot on the face of the CRT? Sol. The functional diagram of an electrostatic focusing arrangement is shown below. The pre-accele

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd