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A source/drain implant is done with arsenic with a dose of 1 X 1015 cm-2 and an energy of 40 key.
A titanium silicide layer is then formed on top of the source/drain regions to reduce the sheet resistance of those regions.
This is done by depositing Ti on the surface and annealing. 55 nm of suicide is formed, which consumes the top surface of the Si in the source/drain regions and as a result reduces the amount of As dopant in the Si.
What is the peak concentration of As in the Si in the source/drain regions after the silicidation process?
(Assume that the implant is done directly into the Si with no oxide and that no dopant diffusion or segregation occurs during the silicidation.)
Calculate the reciprocal lattice of the body-centred cubic and Show that the reciprocal of the face-centred cubic (fcc) structure is itself a bcc structure.
How much gasoline do vehicles with the following fuel efficiencies consume in one year? Calculate the gasoline savings, in gallons per year, created by the following two options. Show all your work, and draw boxes around your answers.
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How did this procedure affect the signal observed from the electrode and the electrode impedances?
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Using the data provided on the webvista site in the file marked vdw.txt, try to develop a mathematical equation for the vdW potential we discussed in class, U(x), that best fits the data
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