What is the maximum implant dose that would be suitable

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Reference no: EM131793838

An engineer worried about avoiding punch through in an NMOS device decides to perform a deep punch through implant while keeping the surface concentration at a maximum value of I x 10¹⁷ cm^-3.

What is the maximum implant dose that would be suitable if the peak of the profile is aligned at twice the depth of the deep source/drain contact junction in a 180 nm technology?

Reference no: EM131793838

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