What device width is needed to ensure the minimum resistance

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A switch is made with an n-channel MOS device in a technology for which oxide thickness is 20 nm, minimum channel length is 1 um, unCox = 100 uA/V2, and VTH = 0.8 V. The devices operates in deep triode (i.e. small VDS) and with the gate-source voltage in the range of 0 V to 5 V. What device width is needed to ensure that the minimum available resistance is 1 k-ohm?

Reference no: EM13262211

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