Sketch relevant part of circuit and describe operation

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Reference no: EM131021308

Consider the read operation of the 6T SRAM cell of Fig. when it is storing a 0, that is, VQ =0 V, and VQ =VDD. Assume that the bit lines are precharged to VDD before the word-line voltage is raised to VDD. Sketch the relevant part of the circuit and describe the operation. Show that the analysis parallels that presented in the text for the read-1 operation.

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Reference no: EM131021308

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