Reference no: EM132762690

The first step is to take the information from ParticleHits (the position, energy and recoil type) and use the Lindhard calculation, to determine the primary charge and phonon energies, and create the primary e/h and phonon particles. In the simulation these initial phonon and charge carriers are created at the interaction point, each with the energies. Since the recoil is with the entire crystal, rather than the single particle, we approximate the creation direction of motion of all phonons and charges with a directionally-random distribution, which is valid approach due to crystal momentum physics constraints. The second step is to propagate the charges and phonons, and simulate the creation of secondary of phonons, for use as input to TESSim and FETSim. The implementation is reduced to two processes: propagation of phonons, and propagation of charges with secondary phonon creation. These processes can be solved at every time-step of the computation taking into account the crystal propagation constraints, for electrons and holes. How does this process different for the iZIP and the HV detectors? How does HV benefit with high voltage mode in this setup?