Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Given an NMOS with gate dielectric thickness Tox = 120A° (SiO2), effective channel mobility µe f f = 1000cm2v-1s-1,channel length L = 15µm, channel width W = 150µm, Si substrate doping NA = 4E16cm-3. Assume Vf b = 0.
(A). Calculate VT .
(B). Create a plot of ID vs VD at various VG levels. For the purpose of practice, please use a plotting softwarefor this part. You can use piecewise functions given by Eqn. 6-49 and Eqn. 6-53 as you go from linear regioninto saturation region.
(C). Calculate the drain saturation current IDSAT at VG = 3V.
(D). Calculate the saturation transconductance gmSAT at VG = 3V.
The normalized lowpass filter with a cutoff frequency of 1 rad/sec is given as Hp(s) 1/s+1 a. Use Hp(s) and the BLT to obtain an corresponding IIR digital high passs filter with a cutoff of 30 Hz, assuming a sampling rate of 200 hz,
A balanced transmission line picks up an undesired signal with a 5-mW level. After conversion to an unbalanced signal using a center-tapped transformer, the undesired signal is 0.011 uW. Calculate the common mode rejection ratio (CMRR).
What kind of a semiconductor is widely in integrated circuit electronics?
A 50V DC source is connected in series with a switch, an 8.2k ohm resistor, and a 0.01 microfarad capacitor. There is no initial charge on the capacitor and the switch is open. Determine both A & B The time at which the capacitor is fully charged
Design a D.T. FIR filter to only pass a band of frequencies 20 kHz wide from the frequencies between 10 kHz and 30 kHz. The center frequency of the band lies at 20 kHz and the sampling frequency is 200 kHz. Use the Hamming window.
Phosphorus atoms, at a concentration of 5*10^16 cm^-3, are added to a pure sample of intrinsic silicon. Assume the phosphorus atoms are distributed homogeneously throughout the silicon sample. What is the fraction by weight of phosphorus
Suppose a 15-uF capacitor is charged to 500 V. Determine the stored charge and energy. If this capacitor is discharged to 0 V in a time interval of 4 ?s, find the average power delivered by the capacitor during the discharge
A very long insulating cylinder of charge of radius 2.30 cm carries a uniform linear density of 17.0 nC/m . If you put one probe of a voltmeter at the surface, how far from the surface must the other probe be placed so that the voltmeter reads 180..
A 50 V DC power supply is connected to a 100 Ohm load resistor. The tested current flowing through the resistor is 0.49 A. find the internal resistance of the DC power suppy.
Using bit-slicing technique, design a circuit that calculates the expression 2*a-b. Operands a, and b are each 4 bits long. The result is represented using 5 bits. Show the transistor-level design using dynamic circuits.
The torque produced by an external magnetic field is torque = D[5i,-3j] where D is a positive constant, and for this orientation of the loop the magnetic potential energy U = -mu cross B is negative. The magnitude of the magnetic field is 14D/IA
If Vid is 20-mV peak-to-peak sine wave applied in a balanced manner but superimposed on Vcm = 0.5 V, what is the lowest value that Vdd must have to ensure saturation -mode for Q1 and Q2 at all times. Assume Vt = 0.5 V.
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +1-415-670-9521
Phone: +1-415-670-9521
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd