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An n-channel MOS device in a technology for which oxide thickness is 20nm, minimum channel length is 1μm, k'n = 100μA/V2, and Vt=0.8 V operates in the triode region, with small vDS and with the gate-source voltage in the range 0V to +5V. What device width is needed to ensure that the minimum available resistance is 1 KΩ?
Find c > 0 such that the area of the region enclosed by the parabolas y = x^2 - c^2 and y = c^2 -x^2 is 30. c= 6. Find the area of the region bounded by the parabola y = 4 x^2, the tangent line to this parabola at (3, 36) and the x axis.
1. Draw the frequency spectrum at the output of the first balanced modulator. 2. If the filter is a low pass filter, draw the frequency spectrum at the output of the filter and amplifier.
Two generators are connected in parallel to the same bus bar and each has an inductive reactance of 10% on rating. Generator 1 is rated 2,500 kVA and 2.4 kV, and generator 2 is rated 5,000 kVA and 2.4 kV.
(a) How many atoms are there in the unit cell characterizing the Si lattice (b) Verify that there are 4.994 X 1022 atoms/cm' in the Si lattice at room temperature. (c) Determine the eenter-to-center distance between nearest neighbors in the Si lattic..
a digital signal represented by a binary voltage +5.55 and -4.5V , is transmitted over an AWGN channel with noise standard dev 1.12 V.Compute the volt. f the optimum thresholdwhen the priori probabilities of the binary source
An infinite grounded conducting tube of radius 10cm is centered on the z axis. A concentric charged tube of radius 6 cm has a surface charge density of 24 uC/m2. A 1m long section of the charged tube is compressed to change its radius to 3 cm.
Can we build a bandpass filter using a low pass and a high pass filter combination. If your answer is yes, then how should the cut off frequencies be arranged. Illustrate your answer with a simple example.
Implement the truth table shown below using the minimum number of NAND gates. Use 2-, 3- , and/or 4-input NAND gates as required to minimize gates. Develop a logic circuit, using only NAND gates, to implement a circuit.
Capacitance can be altered by immersing part of the two wire line into a different medium. (a) What is the capaccitance per unit length in F/m of the transmission lines. You must explain your reasoning and show the equation you used.
State two signs of SCID. Explain two options for expecting parents who have family members with SCID and are concerned their child will be affected with the immuno deficiency. Why might parents choose these options
(a) Draw the equivalent circuit. (b) Determine the ohmic value of the impedances. (c) Calculate the source current in amperes and in percent if the generator operating voltage is 3.8 kV (line-to-line) and a reactance of X=125% is connected in seri..
A glass tube with a cross-sectional area of 9^-2 m^2 contains an ionizd gas. The densities are 10^15 positive ions/m^ and 10^11 free electrons/m^3. Under the influence of an applied voltage, the postive ions are moving.
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